D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 271

MCU 3V 0K I-TEMP 144-QFP

D12674RVFQ33D

Manufacturer Part Number
D12674RVFQ33D
Description
MCU 3V 0K I-TEMP 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheet

Specifications of D12674RVFQ33D

Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412674RVFQ33D
HD6412674RVFQ33D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12674RVFQ33DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
When the interval specification from the PLL command to the REF command cannot be satisfied,
setting the RCW1 and RCW0 bits of REFCR enables one to three wait states to be inserted after
the T
cycle that is set by the TPC1 and TPC0 bits of DRACCR. Set the optimum number of
Rp
waits according to the synchronous DRAM connected and the operating frequency of this LSI.
Figure 6.55 shows the timing when one wait state is inserted. Since the setting of bits TPC1 and
TPC0 of DRACCR is also valid in refresh cycles, the command interval can be extended by the
RCW1 and RCW0 bits after the precharge cycles.
T
T
T
T
T
T
Rp1
Rp2
Rrw
Rr
Rc1
Rc2
SDRAM
Address bus
Precharge-sel
RAS
CAS
WE
CKE
High
PALL
NOP
REF
NOP
Figure 6.55 Auto Refresh Timing
(TPC = 1, TPC0 = 1, RCW1 = 0, RCW0 = 1)
Rev. 3.00 Mar 17, 2006 page 219 of 926
REJ09B0283-0300

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