D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 853

MCU 3V 0K I-TEMP 144-QFP

D12674RVFQ33D

Manufacturer Part Number
D12674RVFQ33D
Description
MCU 3V 0K I-TEMP 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheet

Specifications of D12674RVFQ33D

Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412674RVFQ33D
HD6412674RVFQ33D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12674RVFQ33DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
The FLMCR1, FLMCR2, EBR1, and EBR2 settings are retained, but program mode or erase
mode is forcibly aborted at the point at which the error occurred. Program mode or erase mode
cannot be re-entered by re-setting the P or E bit. However, PV and EV bit setting is enabled, and a
transition can be made to verify mode. The error protection state can be canceled by a power-on
reset or in hardware standby mode.
19.10
In programmer mode, a PROM programmer can perform programming/erasing via a socket
adapter, just like for a discrete flash memory. Use a PROM programmer which supports the
Renesas 512-kbyte flash memory on-chip MCU device type (FZTAT512V3A). A 12-MHz input
clock is needed.
19.11
In user mode, the flash memory will operate in either of the following states:
Table 19.7 shows the correspondence between the operating modes of this LSI and the flash
memory. When the flash memory returns to normal operation from a standby state, a power supply
circuit stabilization period is needed. When the flash memory returns to its normal operating state,
bits STS3 to STS0 in SBYCR must be set to provide a wait time of at least 100 µs, even when the
external clock is being used.
Table 19.7 Flash Memory Operating States
Operating Mode
Active mode
Sleep mode
Standby mode
Normal operating mode
The flash memory can be read.
Standby mode
All flash memory circuits are halted.
Programmer Mode
Power-Down States for Flash Memory
Flash Memory Operating State
Normal operating state
Normal operating state
Standby state
Section 19 Flash Memory (F-ZTAT Version)
Rev. 3.00 Mar 17, 2006 page 801 of 926
REJ09B0283-0300

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