D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 231
D12674RVFQ33D
Manufacturer Part Number
D12674RVFQ33D
Description
MCU 3V 0K I-TEMP 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheet
1.D12674RVFQ33V.pdf
(981 pages)
Specifications of D12674RVFQ33D
Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412674RVFQ33D
HD6412674RVFQ33D
HD6412674RVFQ33D
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D12674RVFQ33DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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If a row address hold time or read access time is necessary, making a setting in bits RCD1 and
RCD0 in DRACCR allows from one to three T
to be inserted between the T
the column address is output. Use the setting that gives the optimum row address signal hold time
relative to the falling edge of the RAS signal according to the DRAM connected and the operating
frequency of this LSI. Figure 6.24 shows an example of the timing when one T
Read
Write
Note: n = 2 to 5
Figure 6.24 Example of Timing with One Row Address Output Maintenance State
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
cycle, in which the RAS signal goes low, and the T
T
p
(RAST = 0, CAST = 0)
Row address
T
r
rw
states, in which row address output is maintained,
T
Rev. 3.00 Mar 17, 2006 page 179 of 926
rw
Section 6 Bus Controller (BSC)
High
High
T
Column address
c1
rw
REJ09B0283-0300
c1
state is set.
cycle, in which
T
c2
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