D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 848

MCU 3V 0K I-TEMP 144-QFP

D12674RVFQ33D

Manufacturer Part Number
D12674RVFQ33D
Description
MCU 3V 0K I-TEMP 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheet

Specifications of D12674RVFQ33D

Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412674RVFQ33D
HD6412674RVFQ33D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12674RVFQ33DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 19 Flash Memory (F-ZTAT Version)
19.8.1
When programming data or programs to the flash memory, the program/program-verify flowchart
shown in figure 19.10 should be followed. Performing programming operations according to this
flowchart will enable data or programs to be programmed to the flash memory without subjecting
the chip to voltage stress or sacrificing program data reliability.
1. Programming must be done to an empty address. Do not reprogram an address to which
2. Programming should be carried out 128 bytes at a time. A 128-byte data transfer must be
3. Prepare the following data storage areas in RAM: a 128-byte programming data area, a 128-
4. Consecutively transfer 128 bytes of data in byte units from the programming data area,
5. The time during which the P bit is set to 1 is the programming time. Figure 19.10 shows the
6. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
7. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 2 bits
8. The maximum number of repetitions of the program/program-verify sequence to the same bit
Rev. 3.00 Mar 17, 2006 page 796 of 926
REJ09B0283-0300
programming has already been performed.
performed even if programming fewer than 128 bytes. In this case, H'FF data must be written
to the extra addresses.
byte reprogramming data area, and a 128-byte additional-programming data area. Perform
reprogramming data computation and additional programming data computation according to
figure 19.10.
reprogramming data area, or additional-programming data area to the flash memory. The
program address and 128-byte data are latched in the flash memory. The lower 8 bits of the
start address in the flash memory destination area must be H'00 or H'80.
allowable programming times.
Set a value greater than (y + z2 +
are B'00. Verify data can be read in words from the address to which a dummy write was
performed.
(N) must not be exceeded.
Program/Program-Verify
+ ) µs as the WDT overflow period.

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