D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 228

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

Section 6 Bus Controller (BSC)
6.6.5
Figure 6.21 shows the basic access timing for DRAM space.
The four states of the basic timing consist of one T
output cycle) state, and the T
When DRAM space is accessed, the RD signal is output as the OE signal for DRAM. When
connecting DRAM provided with an EDO page mode, the OE signal should be connected to the
Rev. 3.00 Mar 17, 2006 page 176 of 926
REJ09B0283-0300
Read
Write
Note: n = 2 to 5
Basic Timing
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
Figure 6.21 DRAM Basic Access Timing (RAST = 0, CAST = 0)
c1
and two T
T
p
Row address
c2
(column address output cycle) states.
High
High
p
T
(precharge cycle) state, one T
r
T
c1
Column address
T
c2
r
(row address