D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 280

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

Section 6 Bus Controller (BSC)
(2) Read Data Extension
If the CKSPE bit is set to 1 in DRACCR when the continuous synchronous DRAM space is read-
accessed in DMAC/EXDMAC single address mode, the establishment time for the read data can
be extended by clock suspend mode. The number of states for insertion of the read data extension
cycle (Tsp) is set in bits RDXC1 and RDXC0 in DRACCR. Be sure to set the OEE bit to 1 in
DRAMCR when the read data will be extended. The extension of the read data is not in
accordance with the bits DDS and EDDS.
Figure 6.62 shows the timing chart when the read data is extended by two cycles.
Rev. 3.00 Mar 17, 2006 page 228 of 926
REJ09B0283-0300
Figure 6.62 Example of Timing when the Read Data Is Extended by Two States
(DDS = 1, or EDDS = 1, RDXC1 = 0, RDXC0 = 1, CAS Latency 2)
DACK or EDACK
Precharge-sel
DQMU, DQML
Address bus
SDRAM
Data bus
CKE
CAS
RAS
WE
PALL ACTV
Column
address
T
p
address
address
Row
Row
T
r
READ
T
c1
T
cl
NOP
T
c2
Column address
T
sp1
T
sp2