D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 826

MCU 3V 0K I-TEMP 144-QFP

D12674RVFQ33D

Manufacturer Part Number
D12674RVFQ33D
Description
MCU 3V 0K I-TEMP 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheet

Specifications of D12674RVFQ33D

Core Processor
H8S/2600
Core Size
16-Bit
Speed
33MHz
Connectivity
IrDA, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
103
Program Memory Type
ROMless
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412674RVFQ33D
HD6412674RVFQ33D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12674RVFQ33DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 19 Flash Memory (F-ZTAT Version)
19.2
When the mode pins and the FWE pin * are set in the reset state and a reset-start is executed, this
LSI enters an operating mode as shown in figure 19.2. In user mode, flash memory can be read but
not programmed or erased.
The boot, user program and programmer modes are provided as modes to write and erase the flash
memory.
Rev. 3.00 Mar 17, 2006 page 774 of 926
REJ09B0283-0300
Programming/erasing protection
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase operations.
Legend:
FLMCR1: Flash memory control register 1
FLMCR2: Flash memory control register 2
EBR1:
EBR2:
RAMER:
SYSCR:
Note: * Only in H8S/2678 Group.
Mode Transitions
Erase block register 1
Erase block register 2
RAM emulation register
System control register
FLMCR1
FLMCR2
RAMER
SYSCR
EBR1
EBR2
Figure 19.1 Block Diagram of Flash Memory
Internal data bus (16 bits)
Internal address bus
Bus interface/controller
Flash memory
Operating
mode
FWE pin *
Mode pins

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