D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 826

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

Section 19 Flash Memory (F-ZTAT Version)
19.2
When the mode pins and the FWE pin * are set in the reset state and a reset-start is executed, this
LSI enters an operating mode as shown in figure 19.2. In user mode, flash memory can be read but
not programmed or erased.
The boot, user program and programmer modes are provided as modes to write and erase the flash
memory.
Rev. 3.00 Mar 17, 2006 page 774 of 926
REJ09B0283-0300
Programming/erasing protection
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase operations.
Legend:
FLMCR1: Flash memory control register 1
FLMCR2: Flash memory control register 2
EBR1:
EBR2:
RAMER:
SYSCR:
Note: * Only in H8S/2678 Group.
Mode Transitions
Erase block register 1
Erase block register 2
RAM emulation register
System control register
FLMCR1
FLMCR2
RAMER
SYSCR
EBR1
EBR2
Figure 19.1 Block Diagram of Flash Memory
Internal data bus (16 bits)
Internal address bus
Bus interface/controller
Flash memory
Operating
mode
FWE pin *
Mode pins