D12674RVFQ33D Renesas Electronics America, D12674RVFQ33D Datasheet - Page 229

• Manufacturer Part Number: D12674RVFQ33D
• Description: MCU 3V 0K I-TEMP 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of D12674RVFQ33D

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: IrDA, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 12x10b; D/A 4x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412674RVFQ33D; HD6412674RVFQ33D

(OE ) pin of the DRAM. Setting the OEE bit to 1 in DRAMCR enables the OE signal for DRAM
space to be output from a dedicated OE pin. In this case, the OE signal for DRAM space is output
from both the RD pin and the (OE) pin, but in external read cycles for other than DRAM space,
the signal is output only from the RD pin.
6.6.6
The column address output cycle can be changed from 2 states to 3 states by setting the CAST bit
to 1 in DRAMCR. Use the setting that gives the optimum specification values (CAS pulse width,
etc.) according to the DRAM connected and the operating frequency of this LSI. Figure 6.22
shows an example of the timing when a 3-state column address output cycle is selected.
Read
Write
Note: n = 2 to 5
Figure 6.22 Example of Access Timing with 3-State Column Address Output Cycle
Column Address Output Cycle Control
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
T
p
Row address
(RAST = 0)
High
High
T
r
Rev. 3.00 Mar 17, 2006 page 177 of 926
T
c1
Column address
Section 6 Bus Controller (BSC)
T
c2
REJ09B0283-0300
T
c3