HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 172

MCU 5V 512K,PB-FREE 100-TQFP

HD64F3029XBL25V

Manufacturer Part Number
HD64F3029XBL25V
Description
MCU 5V 512K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3029XBL25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Cautions: When using address update modes, the following points should be noted.
Figure 6.6 Example of Consecutive External Space Accesses in Address Update Mode 2
When address update mode 2 is selected, the address in an internal space (on-chip memory or
internal I/O) access cycle is not output externally.
In order to secure address holding with respect to the rise of RD, when address update mode 2
is used an external space read access must be completed within a single access cycle. For
example, in a word access to 8-bit access space, the bus cycle is split into two as shown in
figure 6.6, and so there is not a single access cycle. In this case, address holding is not
guaranteed at the rise of RD between the first (even address) and second (odd address) access
cycles (area inside the ellipse in the figure).
When address update mode 2 is selected, in a DRAM space CAS-before-RAS (CBR) refresh
cycle the previous address is retained (the area 2 start address is not output).
Address update
mode 2
RD
memory cycle
On-chip
Even address
(8-bit space word access)
External read cycle
Odd address
Rev. 2.0, 06/04, page 143 of 980
memory cycle
On-chip

Related parts for HD64F3029XBL25V