HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 198
HD64F3029XBL25V
Manufacturer Part Number
HD64F3029XBL25V
Description
MCU 5V 512K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet
1.HD64F3029X25.pdf
(1012 pages)
Specifications of HD64F3029XBL25V
Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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(
When RAS down mode is selected, the CAS-before-RAS refresh function provided with this
DRAM interface must always be used as the DRAM refreshing method. When a refresh
operation is performed, the RAS signal goes high immediately beforehand. The refresh
interval setting must be made so that the maximum DRAM RAS pulse width specification is
observed.
When the self-refresh function is used, the RDM bit must be cleared to 0, and RAS up mode
selected, before executing a SLEEP instruction in order to enter software standby mode.
Select RAS down mode again after exiting software standby mode.
Note that RAS down mode cannot be used when HWR and LWR are selected for UCAS and
LCAS, a device other than DRAM is connected to external space, and HWR and LWR are
used as write strobes.
RAS Up Mode
To select RAS up mode, clear the RDM bit to 0 in DRCRA. Each time access to DRAM space
is interrupted and another space is accessed, the RAS signal returns to the high level. Burst
operation is only performed if DRAM space is continuous. Figure 6.25 shows an example of
the timing in RAS up mode.
PB
Note: n = 2 to 5
D
A
4
15
23
/
/PB
(
to D
to A
5
)
0
0
)
Figure 6.25 Example of Operation Timing in RAS Up Mode
T
p
DRAM access
Tr
T
c1
T
c2
T
DRAM access
c1
Rev. 2.0, 06/04, page 169 of 980
T
c2
External space
T
1
access
T
2
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