HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 203

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

6.5.12
Examples of DRAM connection and program setup procedures are shown below. When the
DRAM interface is used, check the DRAM device characteristics and choose the most appropriate
method of use for that device.
Connection Examples
Rev. 2.0, 06/04, page 174 of 980
Figure 6.31 shows typical interconnections when using two 2-CAS type 16-Mbit DRAMs
using a
example are of the 10-bit row address
be connected by designating areas 2 to 5 as DRAM space.
Examples of Use
16-bit organization, and the corresponding address map. The DRAMs used in this
10-bit column address type. Up to four DRAMs can