HD64F3029XBL25V Renesas Electronics America, HD64F3029XBL25V Datasheet - Page 206

• Manufacturer Part Number: HD64F3029XBL25V
• Description: MCU 5V 512K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3029XBL25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Figure 6.33 Interconnections and Address Map for 2-CAS 4-Mbit DRAMs with
Figure 6.33 shows typical interconnections when using two 4-Mbit DRAMs, and the
corresponding address map. The DRAMs used in this example are of the 9-bit row address
9-bit column address type. In this example, upper address decoding allows multiple DRAMs
to be connected to a single area. The RFSH pin is used in this case, since both DRAMs must
be refreshed simultaneously. However, note that RAS down mode cannot be used in this
interconnection example.
H8/3029
Area 2
PB
PB
CS
4
5
RD (WE)
2
(UCAS)
(LCAS)
(RAS
D
RFSH
A
15
9
A
-D
-A
19
2
H'400000
H'47FFFE
H'480000
H'4FFFFE
H'500000
H'5FFFFE
1
0
)
(a) Interconnections (example)
(UCAS)
15
PB
(b) Address map
16-Mbyte mode
DRAM (No.1)
DRAM (No.2)
Organization
4
Not used
8
7
(LCAS)
PB
5
0
CS
9-bit row address x 9-bit column address
2
(RAS
RAS
UCAS
LCAS
WE
RAS
UCAS
LCAS
WE
A
A
D
D
2
8
8
)
2-CAS 4-Mbit DRAM
15
15
-A
-A
x16-bit organization
Rev. 2.0, 06/04, page 177 of 980
-D
-D
0
0
0
0
OE
OE
No.1
No.2
16-Bit