ATxmega128B1 Atmel Corporation, ATxmega128B1 Datasheet - Page 386

• Manufacturer Part Number: ATxmega128B1
• Manufacturer: Atmel Corporation

Specifications of ATxmega128B1

• Flash (kbytes): 128 Kbytes
• Pin Count: 100
• Max. Operating Frequency: 32 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 16
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 53
• Ext Interrupts: 53
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 3
• Twi (i2c): 1
• Uart: 2
• Segment Lcd: 160
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 16
• Adc Resolution (bits): 12
• Adc Speed (ksps): 2000
• Analog Comparators: 4
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: AES/DES
• Sram (kbytes): 8
• Eeprom (bytes): 2048
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.6 to 3.6
• Operating Voltage (vcc): 1.6 to 3.6
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 3
• Output Compare Channels: 10
• Input Capture Channels: 10
• Pwm Channels: 10
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

29.7
29.7.1
29.7.2
8291A–AVR–10/11
Flash and EEPROM Programming Sequences
Flash Programming Sequence
EEPROM Programming Sequence
selected page buffer location to tag them. When performing an EEPROM page erase, the actual
value of the tagged location does not matter.
The EEPROM page buffer is automatically erased after:
For page programming, filling the page buffers and writing the page buffer into flash or EEPROM
are two separate operations. The sequence is same for both self-programming and external
programming.
Before programming a flash page with the data in the flash page buffer, the flash page must be
erased. Programming an un-erased flash page will corrupt its content.
The flash page buffer can be filled either before the erase flash Page operation or between a
erase flash page and a write flash page operation:
Alternative 1:
Alternative 2:
Alternative 3, fill the buffer after a page erase:
The NVM command set supports both atomic erase and write operations, and split page erase
and page write commands. This split commands enable shorter programming time for each
command, and the erase operations can be done during non-time-critical programming execu-
tion. When using alternative 1 or 2 above for self-programming, the boot loader provides an
effective read-modify-write feature, which allows the software to first read the page, do the nec-
essary changes, and then write back the modified data. If alternative 3 is used, it is not possible
to read the old data while loading, since the page is already erased. The page address must be
the same for both page erase and page write operations when using alternative 1 or 3.
Before programming an EEPROM page with the tagged data bytes stored in the EEPROM page
buffer, the selected locations in the EEPROM page must be erased. Programming an unerased
EEPROM page will corrupt its content. The EEPROM page buffer must be loaded before any
page erase or page write operations:
• A system reset
• Executing the write EEPROM page command
• Executing the erase and write EEPROM page command
• Executing the write lock bit and write fuse commands
• Fill the flash page buffer
• Perform a flash page erase
• Perform a flash page write
• Fill the flash page buffer
• Perform an atomic page erase and write
• Perform a flash page erase
• Fill the flash page bufferPerform a flash page write
Atmel AVR XMEGA B
386