ATxmega128B1 Atmel Corporation, ATxmega128B1 Datasheet - Page 390

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ATxmega128B1

Manufacturer Part Number
ATxmega128B1
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATxmega128B1

Flash (kbytes)
128 Kbytes
Pin Count
100
Max. Operating Frequency
32 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
53
Ext Interrupts
53
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
3
Twi (i2c)
1
Uart
2
Segment Lcd
160
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
4
Resistive Touch Screen
No
Temp. Sensor
Yes
Crypto Engine
AES/DES
Sram (kbytes)
8
Eeprom (bytes)
2048
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.6 to 3.6
Operating Voltage (vcc)
1.6 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
10
Input Capture Channels
10
Pwm Channels
10
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

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Table 29-2.
Notes:
29.11.2.1
29.11.2.2
8291A–AVR–10/11
CMD[6:0]
0x02E
0x2F
0x3A
Application Section
0x20
0x22
0x24
0x25
0x38
Boot Loader Section
0x2A
0x2C
0x2D
0x39
User Signature Row
0x01
0x18
0x1A
Calibration Row
0x02
(4)
(4)
1. The flash range CRC command used byte addressing of the flash.
2. Will depend on the flash section (application or boot loader) that is actually addressed.
3. This command is qualified with the lock bits, and requires that the boot lock bits are unprogrammed.
4. When using a command that changes the normal behavior of the LPM command; READ_USER_SIG_ROW and
Group Configuration
WRITE_FLASH_PAGE
ERASE_WRITE_FLASH_PAGE
FLASH_RANGE_CRC
ERASE_APP
ERASE_APP_PAGE
WRITE_APP_PAGE
ERASE_WRITE_APP_PAGE
APP_CRC
ERASE_BOOT_PAGE
WRITE_BOOT_PAGE
ERASE_WRITE_BOOT_PAGE
BOOT_CRC
READ_USER_SIG_ROW
ERASE_USER_SIG_ROW
WRITE_USER_SIG_ROW
READ_CALIB_ROW
READ_CALIB_ROW; it is recommended to disable interrupts to ensure correct execution of the LPM instruction.
Read Flash
Erase Flash Page Buffer
Flash self-programming commands (Continued).
The (E)LPM instruction is used to read one byte from the flash memory.
The destination register will be loaded during the execution of the LPM instruction.
The erase flash page buffer command is used to erase the flash page buffer.
The NVM busy (BUSY) flag in the NVM status register (NVM STATUS) will be set until the page
buffer is erased.
(3)
1. Load the Z-pointer with the byte address to read.
2. Load the NVM command register (NVM CMD) with the no operation command.
3. Execute the LPM instruction.
1. Load the NVM CMD with the erase flash page buffer command.
2. Set the command execute bit (NVMEX) in the NVM control register A (NVM CTRLA).
This requires the timed CCP sequence during self-programming.
Description
Write flash page
Erase and write flash page
Flash range CRC
Erase application section
Erase application section page
Write application section page
Erase and write application section page
Application section CRC
Erase boot loader section page
Write boot loader section page
Erase and write boot loader section page
Boot loader section CRC
Read user signature row
Erase user signature row
Write user signature row
Read calibration row
Trigger
SPM
SPM
CMDEX
SPM
SPM
SPM
SPM
CMDEX
SPM
SPM
SPM
CMDEX
LPM
SPM
SPM
LPM
CPU
Halted
N/Y
N/Y
Y
Y
N
N
N
Y
Y
Y
Y
Y
N
Y
Y
N
(2)
(2)
Atmel AVR XMEGA B
NVM
Busy
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
N
Y
Y
N
Change
Protected
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
N
Y
Y
N
Address
Pointer
Z-pointer
Z-pointer
DATA/ADDR
Z-pointer
Z-pointer
Z-pointer
Z-pointer
Z-pointer
Z-pointer
Z-pointer
Z-pointer
Z-pointer
-
-
-
-
(1)
Data
Registe
r
DATA
DATA
DATA
Rd
Rd
-
-
-
-
-
-
-
-
-
-
-
390

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