ATxmega128B1 Atmel Corporation, ATxmega128B1 Datasheet - Page 400

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ATxmega128B1

Manufacturer Part Number
ATxmega128B1
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATxmega128B1

Flash (kbytes)
128 Kbytes
Pin Count
100
Max. Operating Frequency
32 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
53
Ext Interrupts
53
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
3
Twi (i2c)
1
Uart
2
Segment Lcd
160
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
4
Resistive Touch Screen
No
Temp. Sensor
Yes
Crypto Engine
AES/DES
Sram (kbytes)
8
Eeprom (bytes)
2048
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.6 to 3.6
Operating Voltage (vcc)
1.6 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
10
Input Capture Channels
10
Pwm Channels
10
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

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29.12.3
8291A–AVR–10/11
CMD[6:0]
Flash Page Buffer
Flash
Application Section
0x2B
0x2E
0x2F
0x00
0x40
0x43
0x23
0x26
0x78
0x20
0x22
0x24
0x25
NVM Commands
Commands / Operation
No operation
Chip erase
Read NVM
Load flash page buffer
Erase flash page buffer
Erase flash page
Write flash page
Erase and write flash page
Flash CRC
Erase application section
Erase application section page
Write application section page
Erase and write application section page
(1)
data registers, but the NVM controller must be loaded with the correct command (i.e., to read
from any NVM, the controller must be loaded with the NVM read command before loading data
from the PDIBUS address space). For the reminder of this section, all references to reading and
writing data or program memory addresses from the PDI refer to the memory map shown in
ure 29-3 on page
The PDI uses byte addressing, and hence all memory addresses must be byte addresses.
When filling the flash or EEPROM page buffers, only the least-significant bits of the address are
used to determine locations within the page buffer. Still, the complete memory mapped address
for the flash or EEPROM page is required to ensure correct address mapping.
During programming (page erase and page write) when the NVM is busy, the NVM is blocked for
reading.
The NVM commands that can be used for accessing the NVM memories from external program-
ming are listed in
programming.
For external programming, the trigger for action-triggered commands is to set the CMDEX bit in
the NVM CTRLA register (CMDEX). The read-triggered commands are triggered by a direct or
indirect load instruction (LDS or LD) from the PDI (PDI read). The write-triggered commands are
triggered by a direct or indirect store instruction (STS or ST) from the PDI (PDI write).
”Chip Erase” on page 401
rithm for each NVM operation. The commands are protected by the lock bits, and if read and
write lock is set, only the chip erase and flash CRC commands are available.
Table 29-5.
NVM commands available for external programming.
Table 29-5 on page
399.
through
”Write Fuse/ Lock Bit” on page 403
400. This is a superset of the commands available for self-
Atmel AVR XMEGA B
Trigger
-
CMDEX
PDI Read
PDI Write
CMDEX
PDI write
PDI write
PDI write
CMDEX
PDI write
PDI write
PDI write
PDI write
explain in detail the algo-
Change
Protected
Y
N
N
Y
N
N
N
Y
N
N
N
N
-
NVM Busy
Y
N
N
Y
Y
Y
Y
Y
Y
Y
Y
Y
-
Fig-
400

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