ATxmega128B1 Atmel Corporation, ATxmega128B1 Datasheet - Page 397
ATxmega128B1
Manufacturer Part Number
ATxmega128B1
Description
Manufacturer
Atmel Corporation
Specifications of ATxmega128B1
Flash (kbytes)
128 Kbytes
Pin Count
100
Max. Operating Frequency
32 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
53
Ext Interrupts
53
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
3
Twi (i2c)
1
Uart
2
Segment Lcd
160
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
4
Resistive Touch Screen
No
Temp. Sensor
Yes
Crypto Engine
AES/DES
Sram (kbytes)
8
Eeprom (bytes)
2048
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.6 to 3.6
Operating Voltage (vcc)
1.6 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
10
Input Capture Channels
10
Pwm Channels
10
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATxmega128B1-AU
Manufacturer:
TI
Quantity:
90
Company:
Part Number:
ATxmega128B1-U
Manufacturer:
FUJITSU
Quantity:
632
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29.11.5.2
29.11.5.3
29.11.5.4
29.11.5.5
29.11.5.6
8291A–AVR–10/11
Erase EEPROM Page Buffer
Write EEPROM Page
Erase and Write EEPROM Page
Erase EEPROM Page
Erase EEPROM
The erase EEPROM page buffer command is used to erase the EEPROM page buffer.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The erase EEPROM page command is used to erase one EEPROM page.
1.
2.
3.
during self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The page erase commands will only erase the locations that are loaded and tagged in the
EEPROM page buffer.
The write EEPROM page command is used to write all locations loaded in the EEPROM page
buffer into one page in EEPROM. Only the locations that are loaded and tagged in the EEPROM
page buffer will be written.
1.
2.
3.
during self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The erase and write EEPROM page command is used to first erase an EEPROM page and then
write the EEPROM page buffer into that page in EEPROM in one atomic operation.
1.
2.
3.
during self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The erase EEPROM command is used to erase all locations in all EEPROM pages that are
loaded and tagged in the EEPROM page buffer.
1.
2.
during self-programming.
1. Load the NVM CMD register with the erase EEPROM buffer command.
2. Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
during self-programming.
Set up the NVM CMD register to the erase EEPROM page command.
Load the NVM ADDR register with the addess of the EEPROM page to erase.
Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Load the NVM CMD register with the write EEPROM page command.
Load the NVM ADDR register with the address of the EEPROM page to write.
Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Load the NVM CMD register with the erase and write EEPROM page command.
Load the NVM ADDR register with the address of the EEPROM page to write.
Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Set up the NVM CMD register to the erase EPPROM command.
Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Atmel AVR XMEGA B
397
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