HD6417720BP133BV Renesas Electronics America, HD6417720BP133BV Datasheet - Page 406

SH3-DSP, WITH USB AND LCDC, PB-F

HD6417720BP133BV

Manufacturer Part Number
HD6417720BP133BV
Description
SH3-DSP, WITH USB AND LCDC, PB-F
Manufacturer
Renesas Electronics America
Series
SuperH® SH7700r
Datasheet

Specifications of HD6417720BP133BV

Core Processor
SH-3 DSP
Core Size
32-Bit
Speed
133MHz
Connectivity
FIFO, I²C, IrDA, MMC, SCI, SD, SIO, SIM, USB
Peripherals
DMA, LCD, POR, WDT
Number Of I /o
117
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.4 V ~ 1.6 V
Data Converters
A/D 4x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
SH7720 Group, SH7721 Group
Section 9 Bus State Controller (BSC)
9.5.5
SDRAM Interface
SDRAM Direct Connection
(1)
The SDRAM that can be connected to this LSI is a product that has 11/12/13 bits of row address,
8/9/10 bits of column address, 4 or less banks, and uses the A10 pin for setting precharge mode in
read and write command cycles.
The control signals for direct connection of SDRAM are RAS, CAS, RD/WR, DQMUU,
DQMUL, DQMLU, DQMLL, CKE, CS2, and CS3. All the signals other than CS2 and CS3 are
common to all areas, and signals other than CKE are valid when CS2 or CS3 is asserted. SDRAM
can be connected to up to 2 spaces. The data bus width of the area that is connected to SDRAM
can be set to 32 or 16 bits.
Burst read/single write (burst length 1) and burst read/burst write (burst length 1) are supported as
the SDRAM operating mode.
Commands for SDRAM can be specified by RAS, CAS, RD/WR, and specific address signals.
These commands are shown below.
• NOP
• Auto-refresh (REF)
• Self-refresh (SELF)
• All banks precharge (PALL)
• Specified bank precharge (PRE)
• Bank active (ACTV)
• Read (READ)
• Read with precharge (READA)
• Write (WRIT)
• Write with precharge (WRITA)
• Write mode register (MRS)
The byte to be accessed is specified by DQMUU, DQMUL, DQMLU, and DQMLL. Reading or
writing is performed for a byte whose corresponding DQMxx is low. For details on the
relationship between DQMxx and the byte to be accessed, refer to section 9.5.1, Endian/Access
Size and Data Alignment.
Page 346 of 1414
R01UH0083EJ0400 Rev. 4.00
Sep 21, 2010

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