DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 1022

MCU 16BIT FLASH 3V 160K 144-TQFP

DF2117VT20V

Manufacturer Part Number
DF2117VT20V
Description
MCU 16BIT FLASH 3V 160K 144-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2117VT20V

Core Processor
H8S/2600
Core Size
16-Bit
Speed
20MHz
Connectivity
FIFO, I²C, LPC, SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
112
Program Memory Size
160KB (160K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2117VT20V
Manufacturer:
Renesas
Quantity:
100
Part Number:
DF2117VT20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
28.5
Table 28.13 lists the flash memory characteristics.
Table 28.13 Flash Memory Characteristics
Conditions:
Notes: 1. Programming and erase time depends on the data.
Rev. 2.00 Sep. 28, 2009 Page 980 of 994
REJ09B0452-0200
Item
Programming time*
Erase time*
Programming time (total)*
Erase time (total)*
Programming and Erase time
(total)*
Reprogramming count
Data retention time*
1
*
2. Programming and erase time do not include data transfer time.
3 This value indicates the minimum number of which the flash memory are
4. This value indicates the characteristics while the flash memory is reprogrammed within
2
*
4
Flash Memory Characteristics
1
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges
from 1 to the minimum number.)
the specified range (including the minimum number).
*
2
*
4
1
*
V
V
Ta = 0°C to +75°C (operating temperature range for programming/erasing)
1
2
*
4
*
CC
SS
2
*
4
4
= AV
= 3.0 V to 3.6 V, AV
1
*
2
*
4
SS
= 0 V
Symbol Min.
t
t
Σ
Σ
Σ
N
t
P
E
DRP
WEC
tP
tE
tPE
100*
10
CC
= 3.0 V to 3.6 V, Avref = 3.0 V to AV
3
Typ.
1
40
300
600
1.4
1.4
2.9
1000
130
800
1500
Max.
10
4
4
8
ms/4-Kbyte
ms/32-Kbyte
ms/64-Kbyte
Unit
ms/128 bytes
block
block
block
s/160 Kbytes
s/160 Kbytes
s/160 Kbytes
Times
Years
Test Conditions
Ta = 25 °C
Ta = 25 °C
Ta = 25 °C
CC
,

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