DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 368

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

11.6.3
When operation is in timer mode and the corresponding input capture signal is detected during
reading of TCMICR, the input capture signal is delayed by one system clock (φ). Figure 11.15
shows the timing of this conflict.
11.6.4
If the selected edge of TCMCYI is detected in the second half of a cycle of writing to the register
(TCMMLCM or TCMMINCM) in cycle measurement mode, the detected edge signal is delayed
by one cycle of the system clock (φ).
Figure 11.16 shows the timing of this conflict.
Rev. 2.00 Sep. 28, 2009 Page 326 of 994
REJ09B0452-0200
φ
TCMCYI
TCMICR
read signal
Input capture
signal
TCMCNT
TCMICR
ICPF
φ
TCMCYI
Internal write
signal
Input capture
signal
TCMCNT
TCMICR
MAXOVF
Conflict between TCMICR Read and Input Capture
Conflict between Edge Detection in Cycle Measurement Mode and Writing to
TCMMLCM or TCMMINCM
Figure 11.15 Conflict between TCMICR Read and Input Capture
Figure 11.16 Conflict between Edge Detection and Register Write
N - 1
M
M
N
N
(Cycle Measurement Mode)
Capture generated
Capture generated
TCMICR > TCMCNT (Upper liit over)
H'0000
N
N
N + 1
N + 2