DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 342

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

10.8.6
If a compare match occurs in the T
buffer operation will be the data prior to the write. Figure 10.47 shows the timing in this case.
10.8.7
If the input capture signal is generated in the T1 state of a TGR read cycle, the data that is read
will be the data after input capture transfer. Figure 10.48 shows the timing in this case.
Rev. 2.00 Sep. 28, 2009 Page 300 of 994
REJ09B0452-0200
Figure 10.47 Conflict between Buffer Register Write and Compare Match
Conflict between Buffer Register Write and Compare Match
Conflict between TGR Read and Input Capture
φ
Address
Read signal
Input capture
signal
TGR
Internal
data bus
φ
Address
Write signal
Compare
match signal
Buffer
register
TGR
Figure 10.48 Conflict between TGR Read and Input Capture
2
state of a TGR write cycle, the data transferred to TGR by the
X
N
TGR read cycle
TGR write cycle
TGR address
T1
Buffer register
T1
address
M
T2
T2
M
M
N
Buffer register write data