DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 792

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

• Programming/erasing protection
24.2
When the mode pins are set in the reset state and reset start is performed, this LSI enters each
operating mode as shown in figure 24.2. Although the flash memory can be read in user mode, it
cannot be programmed or erased. The flash memory can be programmed or erased in boot mode,
user program mode, user boot mode, and programmer mode. The differences between boot mode,
user program mode, user boot mode, and programmer mode are shown in table 24.1.
Rev. 2.00 Sep. 28, 2009 Page 750 of 994
REJ09B0452-0200
Protection against programming/erasing of the flash memory can be set by hardware
protection, software protection, or error protection.
Mode Transition Diagram
[Legend]
FCCS:
FPCS:
FECS:
FKEY:
FMATS: Flash MAT select register
RAMER: Flash transfer destination address register
Note: To read/write the registers above, the FLSHE bit in the serial timer control register (STCR)
Mode pins
must be set to 1.
Flash code control/status register
Flash program code select register
Flash erase code select register
Flash key code register
Figure 24.1 Block Diagram of Flash Memory
FTDAR
FMATS
FCCS
FPCS
FECS
FKEY
Operating
mode
Internal data bus (16 bits)
Internal address bus
Control unit
Flash memory
User MAT: 160 kbytes
User boot MAT: 8 kbytes
Memory MAT unit