DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 801

MCU 16BIT FLASH 3V 160K 144-TQFP

DF2117VT20V

Manufacturer Part Number
DF2117VT20V
Description
MCU 16BIT FLASH 3V 160K 144-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2117VT20V

Core Processor
H8S/2600
Core Size
16-Bit
Speed
20MHz
Connectivity
FIFO, I²C, LPC, SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
112
Program Memory Size
160KB (160K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2117VT20V
Manufacturer:
Renesas
Quantity:
100
Part Number:
DF2117VT20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
24.7.1
The programming/erasing interface registers are 8-bit registers that can be accessed only in bytes.
These registers are initialized by a power-on reset.
(1)
FCCS monitors errors during programming/erasing the flash memory and requests the on-chip
program to be downloaded to the on-chip RAM.
Bit
7
6
5
4
Flash Code Control/Status Register (FCCS)
Programming/Erasing Interface Registers
Bit Name
FLER
Initial
Value
1
0
0
0
R/W
R
R
R
R
Description
Reserved
These are read-only bits and cannot be modified.
Flash Memory Error
0: Flash memory operates normally (Error protection is
[Clearing condition]
1: An error occurs during programming/erasing flash
[Setting conditions]
Indicates that an error has occurred during programming
or erasing the flash memory. When this bit is set to 1,
the flash memory enters the error protection state.
When this bit is set to 1, high voltage is applied to the
internal flash memory. To reduce the damage to the
flash memory, the reset must be released after the reset
input period (period of RES = 0) of at least 100 μs.
invalid)
At a power-on reset
memory (Error protection is valid)
When an interrupt, such as NMI, occurs during
programming/erasing.
When the flash memory is read during
programming/erasing (including a vector read and
an instruction fetch).
When the SLEEP instruction is executed during
programming/erasing (including software standby
mode).
Rev. 2.00 Sep. 28, 2009 Page 759 of 994
REJ09B0452-0200

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