DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 760

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(5)
The FSI commands enable the execution of several instructions for the SPI flash memory. Figure
21.15 shows an example of executing the SPI flash memory erasure instruction.
In flash memory erasure, the SPI flash memory address is stored in FSIAR and an erasure
instruction for the SPI flash memory is executed by an SPI command. The flash memory address
storage in FSIAR is performed by writing data to the sector or block address to be erased via the
host. To distinguish the SPI flash memory erasure from the SPI flash memory programming, the
erasure is performed in the following sequence using the FSIDMYE.
Rev. 2.00 Sep. 28, 2009 Page 718 of 994
REJ09B0452-0200
FSIHBAR: H'231F
FSISR: H'00 (1 MB)
CMDHBAR: H'EFFF
FSI Command Usage Example 1 (SPI Flash Memory Erasure)
H'EFFF_F000
H'2325_4A76
H'EFFF_F000
STEP1
STEP2
STEP3
Figure 21.15 SPI Flash Memory Erasure (Example)
Host address
Host address
Host address
CMD0 (H'10)
CMD0 (H'11)
Dummy data
FSICMDR[7:0]
FSICMDI
B'0
FSIDMDIE
FSICMDR[7:0]
FSICMDI
B'0
FSICMDIE
Command data (H'10)
Command data (H'11)
B'1
B'1
→
→
B'1
B'1
FSIAR[23:0]
H'06_4A76
Interrupt requests
Interrupt requests
B'1
B'0
FSIDMYE
FSIDMYE
FSIDMYE
B'1
→
→
B'0
B'1