DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 759

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(4)
Figure 21.14 shows an example of FSI dummy write.
As shown in figure 21.14, if an LPC/FW memory write cycle occurs while the FSIDMYE bit in
FSILSTR1 is 1, the FSI does not access the SPI flash memory but stores the SPI flash memory
address and write data in FSIAR and FSIWDR, respectively.
H'232E_1BC3
FSIHBAR: H'231F
FSISR: H'00 (1 MB)
CMDHBAR: H'EFFF
FSI Dummy Write
H'2325_4A76
Byte-Program
FSI Dummy Write
Host address
Host address
H'D4
H'73
Figure 21.14 FSI Dummy Write (Example)
FSIWDR[31:0]
FSIWDR[31:0]
H'0000_0073
H'0000_00D4
FSIAR[23:0]
FSIAR[23:0]
H'06_4A76
H'0F_1BC3
FSIDMYE
FSIDMYE
B'1
B'0
Rev. 2.00 Sep. 28, 2009 Page 717 of 994
SPI Flash memory
Flash memory address
H'D4
REJ09B0452-0200
H'0F_1BC3