DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 791

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

The flash memory has the following features. Figure 24.1 is a block diagram of the flash memory.
24.1
• Size
• Two flash-memory MATs according to LSI initiation mode.
• Programming/erasing interface by the download of on-chip program
• Programming/erasing time
• Number of programming
• Three on-board programming modes
• Off-board programming mode
H8S/2117R
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting at initiation determines which memory MAT
is initiated first.
The MAT can be switched by using the bank-switching method after initiation.
⎯ The user memory MAT is initiated at a power-on reset in user mode: 160K bytes
⎯ The user boot memory MAT is initiated at a power-on reset in user boot mode: 8K bytes
This LSI has a programming/erasing program. After downloading this program to the on-chip
RAM, programming/erasing can be performed by setting the parameters.
Programming time: 1 ms (typ) for 128-byte simultaneous programming, 7.8 μs per byte
Erasing time: 600 ms (typ) per 1 block (64 kbytes)
The number of programming can be up to 100 times at the minimum. (1 to 100 times are
guaranteed.)
Boot mode: Using the on-chip SCI-1, the user MAT can be programmed/erased. In boot mode,
the bit rate between the host and this LSI can be adjusted automatically.
User program mode: Using a desired interface, the user MAT can be programmed/erased.
User boot mode: The User boot program of The optional interface can be made and The User
MAT can be programmed.
Programmer mode: Using a PROM programmer, the user MAT can be programmed/erased.
Product Classification
Features
R4F2117R
Section 24 Flash Memory
ROM Size
160 kbytes
ROM Address
H'000000 to H'027FFF (mode 2)
Rev. 2.00 Sep. 28, 2009 Page 749 of 994
REJ09B0452-0200