DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 822

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

24.8.2
Programming/erasing of the user MAT is executed by downloading an on-chip program. The
programming/erasing flow is shown in figure 24.10.
Since high voltage is applied to the internal flash memory during programming/erasing, a
transition to the reset state must not be made during programming/erasing. A transition to the reset
state during programming/erasing may damage the flash memory. If a reset is input, the reset must
be released after the reset input period (period of RES = 0) of at least 100 μs.
Rev. 2.00 Sep. 28, 2009 Page 780 of 994
REJ09B0452-0200
User Program Mode
transferred to the on-chip
program data is prepared
Programming/erasing
procedure program is
Programming/erasing
Programming/erasing
When programming,
RAM and executed
start
end
Figure 24.10 Programming/Erasing Flow
1.
2.
3.
Programming/erasing is executed only in the on-chip RAM.
After programming/erasing is finished, protect the flash memory
by the hardware protection.
Make sure that the program data do not overlap with the
download destination specified by FTDAR.