DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 863

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 24 Flash Memory
2. Erasure
Erasure is executed by the erasure selection and block erasure commands.
Firstly, erasure is selected by the erasure selection command and the boot program then erases
the specified block. The command should be repeatedly executed if two or more blocks are to
be erased. Sending a block erasure command from the host with the block number H'FF will
stop the erasure operating. On completion of erasing, the boot program will wait for selection
of programming or erasing.
The sequence for the erasure selection and block erasure commands is shown in figure 24.23.
Host
Boot program
Preparation for erasure (H'48)
Transfer of erasure
program
ACK
Erasure (Erasure block number)
Repeat
Erasure
ACK
Erasure (H'FF)
ACK
Figure 24.23 Erasure Sequence
Rev. 2.00 Sep. 28, 2009 Page 821 of 994
REJ09B0452-0200