DF2117VT20V Renesas Electronics America, DF2117VT20V Datasheet - Page 873

• Manufacturer Part Number: DF2117VT20V
• Description: MCU 16BIT FLASH 3V 160K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2117VT20V

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: FIFO, I²C, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 112
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

24.13
1. The initial state of the product at its shipment is in the erased state. For the product whose
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
3. If the socket, socket adapter, or product index does not match the specifications, too much
4. Use a PROM programmer that supports the device with 256-Kbyte on-chip flash memory and
5. Do not power off the Vcc power supply (including the removal of the chip from the PROM
6. The flash memory is not accessible until FKEY is cleared after programming/erasing starts. If
7. At powering on the Vcc power supply, fix the RES pin to low and set the flash memory to
8. In on-board programming mode or programmer mode, programming of the 128-byte
9. When the chip is to be reprogrammed with the programmer after execution of programming or
10. To program the flash memory, the program data and program must be allocated to addresses
11. If data other than H'FF (4 bytes) is written to the key code area (H'00003C to H'00003F) of the
revision of erasing is undefined, we recommend to execute automatic erasure for checking the
initial state (erased state) and compensating.
refer to the instruction manual of the socket adapter.
current flows and the product may be damaged.
3.3 V programming voltage. Use only the specified socket adapter.
programmer) during programming/erasing in which a high voltage is applied to the flash
memory. Doing so may damage the flash memory permanently. If a reset is input, the reset
must be released after the reset input period of at least 100μs.
the operating mode is changed and this LSI is restarted by a reset immediately after
programming/erasing has finished, secure the reset input period (period of RES = 0) of at least
100μs. Transition to the reset state during programming/erasing is inhibited. If a reset is input
accidentally, the reset must be released after the reset input period of at least 100μs.
hardware protection state. This power on timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
programming-unit block must be performed only once. Perform programming in the state
where the programming-unit block is fully erased.
erasure in on-board programming mode, it is recommended that automatic programming is
performed after execution of automatic erasure.
which are higher than those of the external interrupt vector table and H'FF must be written to
all the system reserved areas in the exception handling vector table.
flash memory, reading cannot be performed in programmer mode. (In this case, data is read as
H'00. Rewrite is possible after erasing the data.) For reading in programmer mode, make sure
to write H'FF to the entire key code area.
Usage Notes
Rev. 2.00 Sep. 28, 2009 Page 831 of 994
REJ09B0452-0200