HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 1009

• Manufacturer Part Number: HD64F2239TF20I
• Description: MCU 3V 384K I-TEMP 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of HD64F2239TF20I

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Item
Erase
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
2. Programming time per 128 bytes (Shows the total period for which the P1 bit in the
3. Block erase time (Shows the total period for which the E1 bit in FLMCR1 is set. It does
4. Maximum programming time value
5. Relationship among the maximum erase time (t
6. The minimum times that all characteristics after reprogramming are guaranteed. (The
7. Reference value at 25°C. (Normally, it is a reference that rewriting is enabled up to this
8. Data hold characteristics are when reprogramming is performed within the range of
erase/erase-verify flowchart.
flash memory control register 1 (FLMCR1) is set. It does not include the program
verification time.)
not include the erase verification time.)
setting (t
range between 1 and a minimum value is guaranteed.)
value.)
specifications including a minimum value.
t
(t
t
p
E
(max) = Wait time after P1 bit setting (t
sp30
Wait time after SWE1
bit setting *
Wait time after ESU1
bit setting *
Wait time after E1 bit
setting *
Wait time after E1 bit
clear *
Wait time after ESU1
bit clear *
Wait time after EV1 bit
setting *
Wait time after H'FF
dummy write *
Wait time after EV1 bit
clear *
Wait time after SWE1
bit clear
Maximum erase count *
(max) = Wait time after E1 bit setting (t
+ t
sp10
1
1
se
1
1
), and the maximum erase count (N) is shown below.
*
) × 6 + (t
1
5
1
1
1
sp200
) × 994
1
*
5
Symbol Min
t
t
t
t
t
t
t
t
t
N
sswe
sesu
se
ce
cesu
sev
sevr
cev
cswe
1
100
10
10
10
20
2
4
100
⎯
sp
se
) × maximum program count (N)
) × maximum erase count (N)
Typ
1
100
10
10
10
20
2
4
100
⎯
Rev. 6.00 Mar. 18, 2010 Page 947 of 982
E
(max)), the wait time after E1 bit
Section 27 Electrical Characteristics
Max
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
100
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
REJ09B0054-0600
Test Conditions