HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 807

MCU 3V 384K I-TEMP 100-TQFP

HD64F2239TF20I

Manufacturer Part Number
HD64F2239TF20I
Description
MCU 3V 384K I-TEMP 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet

Specifications of HD64F2239TF20I

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2239TF20I
Manufacturer:
Renesas Electronics America
Quantity:
10 000
20.12
In user mode, the flash memory will operate in either of the following states:
• Normal operating mode
• Power-down state
• Standby mode
Table 20.6 shows the correspondence between the operating modes of this LSI and the flash
memory. When the flash memory returns to its normal operating state from standby mode, a
period to stabilize the power supply circuits that were stopped is needed. When the flash memory
returns to its normal operating state, bits STS2 to STS0 in SBYCR must be set to provide a wait
time of at least 100 µs, even when the external clock is being used.
Table 20.6 Flash Memory Operating States
LSI Operating State
Active mode
Sleep mode
Watch mode
Standby mode
Subactive mode
Subsleep mode
20.13
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
Use the Specified Voltages and Timing for Programming and Erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
the Renesas Technology flash memory on-chip microcomputer device type (FZTAT512V3A,
FZTAT256V3A, or FZTAT128V3A).
The flash memory can be read and written to at high speed.
The flash memory can be read when part of the power circuit is halted and the LSI operates by
subclocks.
All flash memory circuits are halted.
Power-Down States for Flash Memory
Flash Memory Programming and Erasing Precautions
Flash Memory Operating State
Normal operating mode
Normal operating mode
Standby mode
PDWND = 0: Power-down mode (read only)
PDWND = 1: Normal operating mode (read only)
Section 20 Flash Memory (F-ZTAT Version)
Rev. 6.00 Mar. 18, 2010 Page 745 of 982
REJ09B0054-0600

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