HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 968

• Manufacturer Part Number: HD64F2239TF20I
• Description: MCU 3V 384K I-TEMP 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of HD64F2239TF20I

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 27 Electrical Characteristics
Item
Erasing
Notes: 1. Follow the program/erase algorithms when making the time settings.
Rev. 6.00 Mar. 18, 2010 Page 906 of 982
REJ09B0054-0600
2. Programming time per 128 bytes (Indicates the total time during which the P1 bit is set
3. Time to erase one block (Indicates the time during which the E1 bit is set in FLMCR1.
4. Maximum programming time
5. For the maximum erase time (t
6. The minimum times that all characteristics after rewriting are guaranteed. (A range
7. The reference value at 25°C. (Normally, it is a reference that rewriting is enabled up to
8. Data hold characteristics when rewriting is performed within the range of specifications
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
Does not include the erase-verify time.)
(t
(t
wait time after E1 bit setting (z) and the maximum number of erases (N):
between 1 and minimum value is guaranteed.)
this value.)
including minimum value.
P
sp30
(max) = Wait time after P1 bit setting (t
Wait time after SWE1 bit clearing
Maximum number of erases *
+ t
t
E
sp10
(max) = Wait time after E1 bit setting (t
) × 6 + (t
sp200
) × 994
1
*
5
E
(max)), the following relationship applies between the
Symbol
t
N
cswe
sp
) × maximum number of writes (N))
Min
100
⎯
se
) × maximum number of erases (N)
Typ
100
⎯
Max
⎯
100
Unit
µs
Times
Test
Conditions