HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 925

• Manufacturer Part Number: HD64F2239TF20I
• Description: MCU 3V 384K I-TEMP 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of HD64F2239TF20I

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes (Shows the total period for which the P1 bit in the
3. Erase block time (Shows the total period for which the E1 bit in FLMCR1 is set. It does
4. Maximum programming time
5. For the maximum erase time (t
6. The minimum times that all characteristics after reprogramming are guaranteed. (The
7. Reference value at 25°C. (Normally, it is a reference that rewriting is enabled up to this
8. Data hold characteristics are when reprogramming is performed within the range of
flash memory control register 1 (FLMCR1) is set. It does not include the program
verification time.)
not include the erase verification time.)
t
(t
wait time after E1 bit setting (z) and the maximum erase count (N):
t
range between 1 and a minimum value is guaranteed.)
value.)
specifications including a minimum value.
p
E
sp30
(max) = Wait time after E1 bit setting (t
(max) = Wait time after P1 bit setting (t
+ t
sp10
) × 6 + (t
sp200
) × 994
E
(max)), the following relationship applies between the
se
sp
) × Maximum erase count (N)
) × Maximum programming count (N)
Rev. 6.00 Mar. 18, 2010 Page 863 of 982
Section 27 Electrical Characteristics
REJ09B0054-0600