HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 987

• Manufacturer Part Number: HD64F2239TF20I
• Description: MCU 3V 384K I-TEMP 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of HD64F2239TF20I

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

27.5.6
Table 27.49 lists the flash memory characteristics.
Table 27.49 Flash Memory Characteristics
Condition A: V
Condition B: V
Item
Programming time *
Erase time *
Reprogramming count
Data holding time *
Programming
Flash Memory Characteristics
1
*
3
*
V
range), T
regular specifications), T
temperature range; wide-range specifications)
V
range), T
regular specifications)
5
Wait time after SWE1 bit
setting *
Wait time after PSU1 bit
setting *
Wait time after P1 bit
clear *
Wait time after PSU1 bit
clear *
Wait time after PV1 bit
setting *
Wait time after H'FF
dummy write *
Wait time after PV1 bit
clear *
Wait time after SWE1
bit clear
Wait time after P1 bit
setting *
CC
SS
CC
SS
8
= AV
= AV
1
= 2.7 V to 3.6 V, AV
= 2.2 V to 3.6 V, AV
*
2
*
1
1
1
4
1
1
1
1
*
a
a
4
SS
SS
= –20°C to +75°C (Programming/erasing operating temperature range;
= –20°C to +50°C (Programming/erasing operating temperature range;
= 0 V,V
= 0 V, V
1
CC
CC
= 3.0 V to 3.6 V (Programming/erasing operating voltage
= 3.0 V to 3.6 V (Programming/erasing operating voltage
Symbol
t
t
N
t
t
t
t
t
t
t
t
t
t
t
t
a
P
E
DRP
sswe
spsu
cp
cpsu
spv
spvr
cpv
cswe
sp10
sp30
sp200
CC
CC
WEC
= –40°C to +85°C (Programming/erasing operating
= 2.7 V to 3.6 V, V
= 2.2 V to 3.6 V, V
Min
⎯
⎯
100 *
10
1
50
5
5
4
2
2
100
8
28
198
6
Typ
10
100
10000 *
⎯
1
50
5
5
4
2
2
100
10
30
200
Rev. 6.00 Mar. 18, 2010 Page 925 of 982
ref
ref
Section 27 Electrical Characteristics
= 2.7 V to AV
= 2.2 V to AV
7
1200
Max
200
⎯
⎯
⎯
⎯
12
32
202
⎯
⎯
⎯
⎯
⎯
⎯
Unit
ms/128 bytes
ms/block
Times
year
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
CC
CC
,
,
REJ09B0054-0600
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000