HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 804

• Manufacturer Part Number: HD64F2239TF20I
• Description: MCU 3V 384K I-TEMP 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of HD64F2239TF20I

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 20 Flash Memory (F-ZTAT Version)
20.9
There are three kinds of flash memory program/erase protection; hardware protection, software
protection, and error protection.
20.9.1
Hardware protection refers to a state in which programming/erasing of flash memory is forcibly
disabled or aborted because of a transition to reset or standby mode. Flash memory control register
1 (FLMCR1), flash memory control register 2 (FLMCR2), erase block register 1 (EBR1), and
erase block register 2 (EBR2) are initialized. In a reset via the RES pin, the reset state is not
entered unless the RES pin is held low until oscillation stabilizes after powering on. In the case of
a reset during operation, hold the RES pin low for the RES pulse width specified in the AC
Characteristics section.
20.9.2
Software protection can be implemented against programming/erasing of all flash memory blocks
by clearing the SWE1 bit in FLMCR1. When software protection is in effect, setting the P1 or E1
bit in FLMCR1 does not cause a transition to program mode or erase mode. By setting the erase
block register 1 and 2 (EBR1 and EBR2), erase protection can be set for individual blocks. When
EBR1 and EBR2 are set to H'00, erase protection is set for all blocks. By setting bit RAMS in
RAMER, programming/erase protection is set for all blocks.
20.9.3
In error protection, an error is detected when CPU runaway occurs during flash memory
programming/erasing, or operation is not performed in accordance with the program/erase
algorithm, and the program/erase operation is aborted. Aborting the program/erase operation
prevents damage to the flash memory due to overprogramming or overerasing.
When the following errors are detected during programming/erasing of flash memory, the FLER
bit in FLMCR2 is set to 1, and the error protection state is entered.
• When the flash memory of the relevant address area is read during programming/erasing
• Immediately after exception handling (excluding a reset) during programming/erasing
• When a SLEEP instruction is executed during programming/erasing
• When the CPU releases the bus to the DMAC* or DTC during programming/erasing
Note: * Supported only by the H8S/2239 Group.
Rev. 6.00 Mar. 18, 2010 Page 742 of 982
REJ09B0054-0600
(including vector read and instruction fetch)
Program/Erase Protection
Hardware Protection
Software Protection
Error Protection