HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 799

• Manufacturer Part Number: HD64F2239TF20I
• Description: MCU 3V 384K I-TEMP 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of HD64F2239TF20I

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

4. When the RAMS bit in RAMER is set to 1, program/erase protection is enabled for all flash
5. A RAM area cannot be erased by execution of software in accordance with the erase
6. Block area EB0 contains the vector table. When performing RAM emulation, the vector table
20.8
A software method using the CPU is employed to program and erase flash memory in the on-
board programming modes. Depending on the FLMCR1 setting, the flash memory operates in one
of the following four modes: Program mode, program-verify mode, erase mode, and erase-verify
memory blocks (emulation protection). In this state, setting the P1 or E1 bit in FLMCR1 to 1
does not cause a transition to program mode or erase mode.
algorithm.
is needed in the overlap RAM.
Flash Memory Programming/Erasing
H'000000
H'001000
H'002000
H'003000
H'FFD000
H'FFDFFF
Figure 20.10 Example of RAM Overlap Operation
Normal memory map
Flash memory
On-chip RAM
(4 kbytes)
(EB1)
(EB2)
(EB3)
(EB0)
Section 20 Flash Memory (F-ZTAT Version)
Rev. 6.00 Mar. 18, 2010 Page 737 of 982
RAM overlap memory map
Flash memory
Flash memory
On-chip RAM
On-chip RAM
H'FFE000 to
(Shadow of
H'FFDFFF)
(4 kbytes)
(EB0)
(EB2)
(EB3)
REJ09B0054-0600