HD64F2239TF20I Renesas Electronics America, HD64F2239TF20I Datasheet - Page 809

MCU 3V 384K I-TEMP 100-TQFP

HD64F2239TF20I

Manufacturer Part Number
HD64F2239TF20I
Description
MCU 3V 384K I-TEMP 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2200r
Datasheet

Specifications of HD64F2239TF20I

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2239TF20I
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 20 Flash Memory (F-ZTAT Version)
Do Not Set or Clear the SWE1 Bit during Execution of a Program in Flash Memory: Wait
for at least 100 µs after clearing the SWE1 bit before executing a program or reading data in flash
memory.
When the SWE1 bit is set, data in flash memory can be rewritten. Access flash memory only for
verify operations (verification during programming/erasing). Also, do not clear the SWE1 bit
during programming, erasing, or verifying. Similarly, when using the RAM emulation function
while a high level is being input to the FWE pin, the SWE1 bit must be cleared before executing a
program or reading data in flash memory.
However, the RAM area overlapping flash memory space can be read and written to regardless of
whether the SWE1 bit is set or cleared.
Do Not Use Interrupts while Flash Memory Is Being Programmed or Erased: All interrupt
requests, including NMI, should be disabled during FWE application to give priority to
program/erase operations.
Do Not Perform Additional Programming. Erase the Memory before Reprogramming: In
on-board programming, perform only one programming operation on a 128-byte programming
unit block. In programmer mode, too, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
Before Programming, Check That the Chip Is Correctly Mounted in the PROM
Programmer: Overcurrent damage to the device can result if the index marks on the PROM
programmer socket, socket adapter, and chip are not correctly aligned.
Do Not Touch the Socket Adapter or Chip during Programming: Touching either of these can
cause contact faults and write errors.
Reset the Flash Memory before Turning on the Power: To reset the flash memory during
oscillation stabilization period, the reset signal must be input for at least 100 µs.
Apply the Reset Signal while SWE Is Low to Reset the Flash Memory during its operation:
The reset signal is applied at least 100 µs after the SWE bit has been cleared.
Rev. 6.00 Mar. 18, 2010 Page 747 of 982
REJ09B0054-0600

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