MM912H634DM1AER2 Freescale Semiconductor, MM912H634DM1AER2 Datasheet - Page 18

• Manufacturer Part Number: MM912H634DM1AER2
• Description: 16-bit Microcontrollers - MCU 64KS12 LIN2XLS/HS ISENSE
• Manufacturer: Freescale Semiconductor

Specifications of MM912H634DM1AER2

• Rohs: yes
• Core: HCS12
• Processor Series: MM912F634
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 20 MHz
• Program Memory Size: 32 KB
• Data Ram Size: 2 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 5.5 V to 18 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: LQFP-48
• Mounting Style: SMD/SMT
• A/d Bit Size: 10 bit
• A/d Channels Available: 15
• Interface Type: SPI
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Number Of Programmable I/os: 15
• Number Of Timers: 1
• Program Memory Type: Flash
• Supply Voltage - Max: 18 V
• Supply Voltage - Min: 5.5 V

Electrical Characteristics
Table 19. Static Electrical Characteristics - High Voltage Inputs - Lx
Freescale Semiconductor
Table 20. Static Electrical Characteristics - General Purpose I/O - PTB[0…2]
Low Detection Threshold
7.0 V
5.5 V
High Detection Threshold
7.0 V
5.5 V
Hysteresis
5.5 V
Input Current Lx (-0.2 V < V
Analog Input Impedance Lx
Lx Series Resistor
Lx Capacitor (optional)
Analog Input Divider Ratio (RATIO
LXDS (Lx Divider Select) = 0
LXDS (Lx Divider Select) = 1
Analog Input Divider Ratio Accuracy
Analog Inputs Channel Ratio - Mismatch
LXDS (Lx Divider Select) = 0
LXDS (Lx Divider Select) = 1
Note:
Input high voltage
Input low voltage
Input hysteresis
Input high voltage (VS1 = 3.7 V)
Input low voltage (VS1 = 3.7 V)
Input hysteresis (VS1 = 3.7 V)
Input leakage current (pins in high-impedance input mode)
(V
Output high voltage (pins in output mode) Full drive I
Output low voltage (pins in output mode) Full drive I
Internal pull-up resistance (V
Input capacitance
Clamp Voltage when selected as analog input
Analog Input impedance = 10 kOhm max, Capacitance = 12 pF
Analog Input Capacitance = 12 pF
Maximum current all PTB combined (VDDX capability)
Output Drive strength at 10 MHz
20.
IN
= V





The ESD behavior specified in
V
V
V
V
V
DDX
SUP
SUP
SUP
SUP
SUP
or V





27 V
7 V
27 V
7 V
27 V
SSX
)
(20)
IN
IH
< VS1)
min > Input voltage > V
Ratings
Ratings
Lx
= V
Section 3.8, “ESD Protection and Latch-up Immunity"
Lx
/ V
ADOUT0
OL
OH
)
IL
= +10 mA
= –10 mA
max)
RATIO
Lx
RATIO
Symbol
Symbol
V
R
V
V
V
V
MATCH
V
I
R
C
V
C
V
R
CL_AIN
I
HYS3.7
R
C
BMAX
THH
HYS
LxIN
V
THL
V
C
IN
V
V
IH3.7
IL3.7
I
Lx
Lx
HYS
OUT
PUL
IN
OH
AIN
AIN
OL
IH
IN
IL
LX
Lx
are guaranteed without the optional capacitor.
V
0.7V
V
V
0.25
Min
-5.5
DDX
26.25
2.2
1.5
2.6
2.0
-10
9.5
SS
SS
VDD
Min
100
-1.0
-15
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-0.3
-0.3
DDX
-0.8
Static Electrical Characteristics
0.45
37.5
Typ
100
Typ
140
200
2.5
2.5
3.0
3.0
2.0
7.2
6.0
10
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
0.35V
DDX
DDX
48.75
Max
300
100
1.4
1.0
0.8
Max
10.5
10
15
3.4
4.0
3.7
4.5
1.0
1.2
5.5
5.0
5.0
-
-
-
-
-
10
+0.3
+0.3
-
-
-
DDX
MM912F634
MOhm
kOhm
kOhm
kOhm
Unit
Unit
mV
mV
mA
µA
pF
pF
pF
µA
nF
%
%
V
V
V
V
V
V
V
V
V
V
18