MM912H634DM1AER2 Freescale Semiconductor, MM912H634DM1AER2 Datasheet - Page 24

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MM912H634DM1AER2

Manufacturer Part Number
MM912H634DM1AER2
Description
16-bit Microcontrollers - MCU 64KS12 LIN2XLS/HS ISENSE
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MM912H634DM1AER2

Rohs
yes
Core
HCS12
Processor Series
MM912F634
Data Bus Width
16 bit
Maximum Clock Frequency
20 MHz
Program Memory Size
32 KB
Data Ram Size
2 KB
On-chip Adc
Yes
Operating Supply Voltage
5.5 V to 18 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
LQFP-48
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
15
Interface Type
SPI
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
15
Number Of Timers
1
Program Memory Type
Flash
Supply Voltage - Max
18 V
Supply Voltage - Min
5.5 V
Table 34. Dynamic Electrical Characteristics - LIN Physical Layer Interface - LIN (continued)
Electrical Characteristics
Freescale Semiconductor
Transmitter Symmetry
t
tran_sym60% = ttran_pdf60% - ttran_pdr60%
tran_sym40% = ttran_pdf40% - ttran_pdr40%
Note:
TRAN_SYM
31.
32.
V
LIN Transmitter Timing, (V
signal to LIN signal threshold defined at each parameter. See
SUP
< MAX(t
from 7.0 to 18 V, bus load R
TRAN_SYM
60%, t
Ratings
SUP
TRAN_SYM
Figure 6. LIN Timing Measurements for Normal Baud Rate
TXD
RXD
from 7.0 to 18 V) - See
BUS
VSU
V
GND
Figure 5. Test Circuit for Timing Measurements
SU
and C
40%)
Note: Rn and Cn: 1.0k/1.0nF, 660/6.8
LIN
BUS
1.0 nF / 1.0 k, 6.8 nF / 660 , 10 nF / 500 . Measurement thresholds: 50% of TXD
Figure 9
R
C
O
O
Figure 5
t
and
TRAN_SYM
Symbol
Figure
8.
-7.25
Min
Dynamic Electrical Characteristics
Typ
0
Max
7.25
MM912F634
Unit
µs
24

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