MM912H634DM1AER2 Freescale Semiconductor, MM912H634DM1AER2 Datasheet - Page 27

• Manufacturer Part Number: MM912H634DM1AER2
• Description: 16-bit Microcontrollers - MCU 64KS12 LIN2XLS/HS ISENSE
• Manufacturer: Freescale Semiconductor

Specifications of MM912H634DM1AER2

• Rohs: yes
• Core: HCS12
• Processor Series: MM912F634
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 20 MHz
• Program Memory Size: 32 KB
• Data Ram Size: 2 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 5.5 V to 18 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: LQFP-48
• Mounting Style: SMD/SMT
• A/d Bit Size: 10 bit
• A/d Channels Available: 15
• Interface Type: SPI
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 40 C
• Number Of Programmable I/os: 15
• Number Of Timers: 1
• Program Memory Type: Flash
• Supply Voltage - Max: 18 V
• Supply Voltage - Min: 5.5 V

Electrical Characteristics
3.6.2.1.2
This applies only to the Flash, where up to 64 words in a row can be programmed consecutively, using burst programming by
keeping the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Burst programming is more than 2 times faster than single word programming.
3.6.2.1.3
Erasing a 512-byte Flash sector takes:
The setup time can be ignored for this operation.
3.6.2.1.4
Erasing a NVM block takes:
The setup time can be ignored for this operation.
Freescale Semiconductor
Burst Programming
Sector Erase
The sector erase cycle is divided into 16 individual erase pulses to achieve faster system
response during the erase flow. The given erase time (t
consecutive pulses.
Mass Erase
t
t
bwpgm
brpgm
t
mass
t
era
=
=


t
4
swpgm
4000
20000

NOTE
------------------------ -
f
NVMOP

------------------------ -
f
1
Þ
NVMOP
+
------------------------ -
f
63 t
NVMOP
1

+
1
bwpgm
9
ERA

---------- -
f
bus
) specifies the time considering
1
Dynamic Electrical Characteristics
MM912F634
27