HD6417706F133 Renesas Electronics America, HD6417706F133 Datasheet - Page 261

• Manufacturer Part Number: HD6417706F133
• Description: IC SUPERH MPU ROMLESS 176LQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of HD6417706F133

• Core Processor: SH-3
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: EBI/EMI, FIFO, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.75 V ~ 2.05 V
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 176-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

Section 8 Bus State Controller (BSC)
8.5.4
Synchronous DRAM Interface
Synchronous DRAM Direct Connection
Since synchronous DRAM can be selected by the CS signal, physical space areas 2 and 3 can be
connected using RAS and other control signals in common. If the memory type bits (DRAMTP2
to 0) in BCR1 are set to 010, area 2 is ordinary memory space and area 3 is synchronous DRAM
space; if set to 011, areas 2 and 3 are both synchronous DRAM space. However, do not access to
the synchronous DRAM when clock ratio is I :B = 1:1.
With this LSI, burst length 1 burst read/single write mode is supported as the synchronous DRAM
operating mode. A data bus width of 16 or 32 bits can be selected. A 16-byte burst transfer is
performed in a cache fill/write-back cycle, and only one access is performed in a write-through
area write or a non-cacheable area read/write.
The control signals for direct connection of synchronous DRAM are RASL, RASU, CASL,
CASU, RD/WR, CS2 or CS3, DQMUU, DQMUL, DQMLU, DQMLL, and CKE. All the signals
other than CS2 and CS3 are common to all areas, and signals other than CKE are valid and fetched
to the synchronous DRAM only when CS2 or CS3 is asserted. Synchronous DRAM can therefore
be connected in parallel to a number of areas. CKE is negated (low) only when self-refreshing is
performed, and is always asserted (high) at other times.
In the refresh cycle and mode-register write cycle, RASU and RASL or CASU and CASL are
output.
Commands for synchronous DRAM are specified by RASL, RASU, CASL, CASU, RD/WR, and
special address signals. The commands are NOP, auto-refresh (REF), self-refresh (SELF),
precharge all banks (PALL), row address strobe bank active (ACTV), read (READ), read with
precharge (READA), write (WRIT), write with precharge (WRITA), and mode register write
(MRS).
Byte specification is performed by DQMUU, DQMUL, DQMLU, and DQMLL. A read/write is
performed for the byte for which the corresponding DQM is low. In big-endian mode, DQMUU
specifies an access to address 4n, and DQMLL specifies an access to address 4n + 3. In little-
endian mode, DQMUU specifies an access to address 4n + 3, and DQMLL specifies an access to
address 4n.
Figures 8.11 shows examples of the connection of two 1M
16-bit
4-bank synchronous
DRAMs and figure 8.12 shows one 1M
16-bit
4-bank synchronous DRAM, respectively.
Rev. 5.00 May 29, 2006 page 211 of 698
REJ09B0146-0500