HD6417706F133 Renesas Electronics America, HD6417706F133 Datasheet - Page 271

• Manufacturer Part Number: HD6417706F133
• Description: IC SUPERH MPU ROMLESS 176LQFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7700r

Specifications of HD6417706F133

• Core Processor: SH-3
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: EBI/EMI, FIFO, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 103
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.75 V ~ 2.05 V
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 176-LQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

Section 8 Bus State Controller (BSC)
Bank Active
The synchronous DRAM bank function is used to support high-speed accesses to the same row
address. When the RASD bit in MCR is 1, read/write command accesses are performed using
commands without auto-precharge (READ, WRIT). In this case, precharging is not performed
when the access ends. When accessing the same row address in the same bank, it is possible to
issue the READ or WRIT command immediately, without issuing an ACTV command. As
synchronous DRAM is internally divided into two or four banks, it is possible to activate one row
address in each bank. If the next access is to a different row address, a PRE command is first
issued to precharge the relevant bank, then when precharging is completed, the access is
performed by issuing an ACTV command followed by a READ or WRIT command. If this is
followed by an access to a different row address, the access time will be longer because of the
precharging performed after the access request is issued.
In a write, when auto-precharge is performed, a command cannot be issued for a period of Trwl +
Tpc cycles after issuance of the WRITA command. When bank active mode is used, READ or
WRIT commands can be issued successively if the row address is the same. The number of cycles
can thus be reduced by Trwl + Tpc cycles for each write. The number of cycles between issuance
of the precharge command and the row address strobe command is determined by the TPC bit in
MCR.
Whether faster execution speed is achieved by use of bank active mode or by use of basic access is
determined by the probability of accessing the same row address (P1), and the average number of
cycles from completion of one access to the next access (Ta). If Ta is greater than Tpc, the delay
due to the precharge wait when reading is imperceptible. If Ta is greater than Trw1 + Tpc, the
delay due to the precharge wait when writing is imperceptible. In this case, the access speed for
bank active mode and basic access is determined by the number of cycles from the start of access
to issuance of the read/write command: (Tpc + Trcd) (1 – P1) and Trcd, respectively.
There is a limit on Tras, the time for placing each bank in the active state. If there is no guarantee
that there will not be a cache hit and another row address will be accessed within the period in
which this value is maintained by program execution, it is necessary to set auto-refresh and set the
refresh cycle to no more than the maximum value of Tras. In this way, it is possible to observe the
restrictions on the maximum active state time for each bank. If auto-refresh is not used, measures
must be taken in the program to ensure that the banks do not remain active for longer than the
prescribed time.
A burst read cycle without auto-precharge is shown in figure 8.18, a burst read cycle for the same
row address in figure 8.19, and a burst read cycle for different row addresses in figure 8.20.
Similarly, a burst write cycle without auto-precharge is shown in figure 8.21, a burst write cycle
for the same row address in figure 8.22, and a burst write cycle for different row addresses in
figure 8.23.
Rev. 5.00 May 29, 2006 page 221 of 698
REJ09B0146-0500