R5F2L3AAANFP#U1 Renesas Electronics America, R5F2L3AAANFP#U1 Datasheet - Page 728

• Manufacturer Part Number: R5F2L3AAANFP#U1
• Description: MCU FLASH 96+4KB 100LQFP
• Manufacturer: Renesas Electronics America
• Series: R8C/Lx/3AAr

Specifications of R5F2L3AAANFP#U1

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SIO, SSU, UART/USART
• Peripherals: LCD, POR, PWM, Voltage Detect, WDT
• Number Of I /o: 88
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 20x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/L35A Group, R8C/L36A Group, R8C/L38A Group, R8C/L3AA Group,
R8C/L35B Group, R8C/L36B Group, R8C/L38B Group, R8C/L3AB Group
REJ09B0441-0100 Rev.1.00
Page 691 of 802
33. Flash Memory
The flash memory can perform in the following three rewrite modes CPU rewrite mode, standard serial I/O mode, and
parallel I/O mode.
33.1
Table 33.1
Notes:
Table 33.2
Flash memory operating mode
Division of erase blocks
Programming method
Erasure method
Programming and erasure control method
Rewrite control
method
Number of commands
Programming and
erasure endurance
ID code check function
ROM code protection
Function
Rewritable area
Rewrite programs User program
Table 33.1 lists the Flash Memory Version Performance. (Refer to the specifications in Table 1.1 and Table 1.2 for
items not listed in Table 33.1.)
Flash Memory
Rewrite Mode
1. To perform programming and erasure, use VCC = 2.7 V to 5.5 V as the supply voltage. Do not perform
2. Definition of programming and erasure endurance
3. The number of blocks and block division vary with the MCU. Refer to Figure 33.1 Flash Memory Block
programming and erasure at less than 2.7 V.
The programming and erasure endurance is defined on a per-block basis. If the programming and erasure
endurance is n (n = 1,000 or 10,000), each block can be erased n times. For example, if 1,024 1-byte writes are
performed to different addresses in block A, a 1-Kbyte block, and then the block is erased, the programing/
erasure endurance still stands at one. When performing 100 or more rewrites, the actual erase count can be
reduced by executing program operations in such a way that all blank areas are used before performing an
erase operation. Avoid rewriting only particular blocks and try to average out the programming and erasure
endurance of the blocks. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
Diagrams of R8C/L35A, L36A, L38A, L3AA, R8C/L35B, L36B, L38B, and L3AB Groups for details.
Introduction
Flash Memory Version Performance
Flash Memory Rewrite Mode
(2)
User ROM area is rewritten by
executing software commands
from the CPU.
User ROM
Item
Blocks 0 to 8
(Program ROM)
Blocks A, B, C, and D
(Data flash)
Blocks 0 to 8
(Program ROM)
Blocks A, B, C, and D
(Data flash)
CPU Rewrite Mode
Oct 30, 2009
(3)
(3)
(1)
Refer to Figure 33.1 .
3 modes (CPU rewrite, standard serial I/O, and parallel I/O)
Byte units or word units (only for program ROM)
Block erase
Program and erase control by software commands
Rewrite protect control in block units by the lock bit
Individual rewrite protect control on blocks A, B, C, and D
by bits FMR14, FMR15, FMR16, and FMR17 in the FMR1 register
8 commands
1,000 times
10,000 times
Standard serial I/O mode supported
Parallel I/O mode supported
Standard boot program
User ROM area is rewritten
using a dedicated serial
programmer.
User ROM
Standard Serial I/O Mode
Specification
User ROM area is rewritten
using a dedicated parallel
programmer.
User ROM
–
Parallel I/O Mode
33. Flash Memory