R5F2L3AAANFP#U1 Renesas Electronics America, R5F2L3AAANFP#U1 Datasheet - Page 771

• Manufacturer Part Number: R5F2L3AAANFP#U1
• Description: MCU FLASH 96+4KB 100LQFP
• Manufacturer: Renesas Electronics America
• Series: R8C/Lx/3AAr

Specifications of R5F2L3AAANFP#U1

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SIO, SSU, UART/USART
• Peripherals: LCD, POR, PWM, Voltage Detect, WDT
• Number Of I /o: 88
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 20x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/L35A Group, R8C/L36A Group, R8C/L38A Group, R8C/L3AA Group,
R8C/L35B Group, R8C/L36B Group, R8C/L38B Group, R8C/L3AB Group
REJ09B0441-0100 Rev.1.00
Page 734 of 802
Table 34.6
Notes:
t
d(SR-SUS)
Symbol
1. Definition of programming/erasure endurance
2. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
5. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
6. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 1,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
command at least three times until the erase error does not occur.
Program/erase endurance
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Suspend interval necessary for auto-
erasure to complete
Time from suspend until erase restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
(V
Flash Memory (Program ROM) Characteristics
CC
= 2.7 to 5.5 V and T
Parameter
(6)
Oct 30, 2009
(1)
opr
= 0 to 60 C, unless otherwise specified.)
Ambient temperature = 55 C
Conditions
1,000
Min.
2.7
1.8
33
33
20
0
(2)
34. Electrical Characteristics
Typ.
Standard
0.3
80
30 + CPU clock
5 + CPU clock
× 3 cycles
× 1 cycle
Max.
TBD
TBD
5.5
5.5
60
times
year
Unit
ms
ms
ms
V
V
s
C
s
s