R5F2L3AAANFP#U1 Renesas Electronics America, R5F2L3AAANFP#U1 Datasheet - Page 772

• Manufacturer Part Number: R5F2L3AAANFP#U1
• Description: MCU FLASH 96+4KB 100LQFP
• Manufacturer: Renesas Electronics America
• Series: R8C/Lx/3AAr

Specifications of R5F2L3AAANFP#U1

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SIO, SSU, UART/USART
• Peripherals: LCD, POR, PWM, Voltage Detect, WDT
• Number Of I /o: 88
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 20x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R8C/L35A Group, R8C/L36A Group, R8C/L38A Group, R8C/L3AA Group,
R8C/L35B Group, R8C/L36B Group, R8C/L38B Group, R8C/L3AB Group
REJ09B0441-0100 Rev.1.00
Page 735 of 802
Figure 34.2
Table 34.7
Notes:
t
d(SR-SUS)
Symbol
1. Definition of programming/erasure endurance
2. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
5. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
6.
7.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A to D can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
command at least three times until the erase error does not occur.
The data hold time includes time that the power supply is off or the clock is not supplied.
40 C for D version.
Program/erase endurance
Byte program time
(program/erase endurance
Byte program time
(program/erase endurance
Block erase time
(program/erase endurance
Block erase time
(program/erase endurance
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Suspend interval necessary for auto-
erasure to complete
Time from suspend until erase restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Suspend request
FST6: Bit in FST register
FMR21: Bit in FMR2 register
(V
otherwise specified.)
Time delay until Suspend
Flash Memory (Data flash Block A to Block D) Characteristics
CC
(FMR21 bit)
FST6 bit
= 2.7 to 5.5 V and T
(7)
Parameter
Oct 30, 2009
(1)
1,000 times)
1,000 times)
1,000 times)
1,000 times)
opr
= 20 to 85 C (N version) / 40 to 85 C (D version), unless
Ambient temperature = 55 C
Fixed time
Conditions
t
d(SR-SUS)
Clock-dependent
time
10,000
Min.
20
2.7
1.8
33
33
20
(6)
(2)
34. Electrical Characteristics
Access restart
Typ.
160
300
0.2
0.3
Standard
30 + CPU clock
5 + CPU clock
× 3 cycles
× 1 cycle
Max.
TBD
5.5
5.5
85
times
year
Unit
ms
ms
ms
V
V
s
s
C
s
s
s