UPD70F3451GC-UBT-A Renesas Electronics America, UPD70F3451GC-UBT-A Datasheet - Page 1073

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UPD70F3451GC-UBT-A

Manufacturer Part Number
UPD70F3451GC-UBT-A
Description
MCU 32BIT 128KB FLASH 80LQFP
Manufacturer
Renesas Electronics America
Series
V850E/Ix3r
Datasheet

Specifications of UPD70F3451GC-UBT-A

Core Processor
RISC
Core Size
32-Bit
Speed
64MHz
Connectivity
CSI, I²C, UART/USART
Peripherals
DMA, LVD, PWM, WDT
Number Of I /o
44
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 10x12b, 4x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD70F3451GC-UBT-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
the target system.
memory programmer.
applications.
27.1 Features
The V850E/IF3 and V850E/IG3 have a 128 KB or 256 KB on-chip flash memory.
Flash memory can be rewritten with the flash memory programmer or using the self programming mode.
Writing to the flash memory programmer can be performed with the flash memory programmer that is connected to
Writing in the self programming mode can be performed with an application program, without using the flash
Flash memory versions are commonly used in the following development environments and mass production
μ
μ
All area batch erase or erase in block units (2 KB)
Communication through serial interface from the flash memory programmer
Erase/write voltage: Erase/write is possible with a single power supply
Flash memory self programming possible
Rewriting flash memory and read disable function supported (security enforced)
For altering software after the V850E/IF3 and V850E/IG3 is soldered onto the target system.
For differentiating software according to the specification in small scale production of various models.
For data adjustment when starting mass production.
On-board programming
Secure rewriting of entire flash memory area by self programming using boot swap function
Rewriting method
• Rewriting by communication with flash memory programmer via serial interface (on-board/off-board
• Rewriting flash memory by user program (self programming)
Interrupts can be acknowledged during self programming.
PD70F3451 (V850E/IF3), 70F3453 (V850E/IG3): 128 KB on-chip flash memory version
PD70F3452 (V850E/IF3), 70F3454 (V850E/IG3): 256 KB on-chip flash memory version
programming)
CHAPTER 27 FLASH MEMORY
User’s Manual U18279EJ3V0UD
1071

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