UPD70F3451GC-UBT-A Renesas Electronics America, UPD70F3451GC-UBT-A Datasheet - Page 1099

• Manufacturer Part Number: UPD70F3451GC-UBT-A
• Description: MCU 32BIT 128KB FLASH 80LQFP
• Manufacturer: Renesas Electronics America
• Series: V850E/Ix3r

Specifications of UPD70F3451GC-UBT-A

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 64MHz
• Connectivity: CSI, I²C, UART/USART
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 44
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3.5 V ~ 5.5 V
• Data Converters: A/D 10x12b, 4x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

27.9.4 Flash functions
27.9.5 Pin processing
Initialize
Erase
Write
Check
Obtain
information
Setting
(1) FLMD0 pin
Type
The FLMD0 pin is used to set the operation mode when reset is released and to protect the flash memory from
being written during self rewriting. It is therefore necessary to keep the voltage applied to the FLMD0 pin at 0
V when reset is released and a normal operation is executed. It is also necessary to apply a voltage of EV
EV
control before the memory is rewritten.
When self programming has been completed, the voltage on the FLMD0 pin must be returned to 0 V.
Remark
Caution Make sure that the FLMD0 pin is at 0 V when reset is released.
DD1
, and EV
FlashEnv
FlashBlockErase
FlashWordWrite
FlashBlockBlankCheck
FlashBlockIVerify
FlashFLMDCheck
FlashGetInfo
FlashSetInfo
FlashBootSwap
FlashWordRead
Function Name
EV
DD
DD2
: EV
(V850E/IG3 only) level to the FLMD0 pin during the self programming mode period via port
DD0
RESET signal
FLMD0 pin
, EV
DD1
, and EV
FLE
FLBE
FLWW
FLBBC
FLBIV
FLFC
FLGI
FLSI
FLBS
FLWR
Abbr.
Figure 27-5. Mode Change Timing
Table 27-11. Flash Function List
EV
EV
CHAPTER 27 FLASH MEMORY
0 V
0 V
DD
DD
User’s Manual U18279EJ3V0UD
DD2
Initializes flash control.
Erases the specified block.
Successively writes the specified memory contents from the specified flash
memory address, for the number of words specified in 4-byte units.
Checks the erase status of the specified block.
Perform internal verify for the specified block.
Inputs FLMD0 pin and checks FLMD0 setting register value.
Sets the flash information.
Interchanges the contents of the boot swap cluster.
Reads out the data from the specified address.
Reads out information about the flash memory.
(V850E/IG3 only)
operation mode
Normal
Self programming mode
operation mode
Function
Normal
1097
DD0
,