UPD70F3451GC-UBT-A Renesas Electronics America, UPD70F3451GC-UBT-A Datasheet - Page 1075

• Manufacturer Part Number: UPD70F3451GC-UBT-A
• Description: MCU 32BIT 128KB FLASH 80LQFP
• Manufacturer: Renesas Electronics America
• Series: V850E/Ix3r

Specifications of UPD70F3451GC-UBT-A

• Core Processor: RISC
• Core Size: 32-Bit
• Speed: 64MHz
• Connectivity: CSI, I²C, UART/USART
• Peripherals: DMA, LVD, PWM, WDT
• Number Of I /o: 44
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3.5 V ~ 5.5 V
• Data Converters: A/D 10x12b, 4x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

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27.3 Functional Overview
dedicated flash programmer, regardless of whether the V850E/IF3 and V850E/IG3 have already been mounted on the
target system or not (off-board/on-board programming).
supported, so that the program cannot be changed by an unauthorized person.
the program is changed after production/shipment of the target system. A boot swap function that rewrites the entire
flash memory area safely is also supported. In addition, interrupt servicing is supported during self programming, so
that the flash memory can be rewritten under various conditions, such as while communicating with an external device.
On-board programming
Off-board programming
Self programming
The internal flash memory of the V850E/IF3 and V850E/IG3 can be rewritten by using the rewrite function of the
In addition, a security function that prohibits rewriting the user program written to the internal flash memory is also
The rewrite function using the user program (self programming) is ideal for an application where it is assumed that
Remark
Rewrite Method
The FA series is a product of Naito Densei Machida Mfg. Co., Ltd.
Flash memory can be rewritten after the device is mounted on the
target system, by using a dedicated flash memory programmer.
Flash memory can be rewritten before the device is mounted on the
target system, by using a dedicated flash memory programmer and a
dedicated program adapter board (FA series).
Flash memory can be rewritten by executing a user program that has
been written to the flash memory in advance by means of on-board/off-
board programming. (During self programming, instructions cannot be
fetched from or data access cannot be made to the on-chip flash
memory area. Therefore, the rewrite program must be transferred to
the internal RAM or external memory (
70F3454F1-DA9-A only) in advance).
CHAPTER 27 FLASH MEMORY
Table 27-1. Rewrite Method
User’s Manual U18279EJ3V0UD
Functional Outline
μ
PD70F3454GC-8EA-A and
Flash memory
programming mode
Normal operation mode
Operation Mode
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