HD6417760BL200AV Renesas Electronics America, HD6417760BL200AV Datasheet - Page 390

• Manufacturer Part Number: HD6417760BL200AV
• Description: SH4 7760, 17 X17 256BGA, LCDC, U
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7750r

Specifications of HD6417760BL200AV

• Core Processor: SH-4
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: Audio Codec, CAN, EBI/EMI, FIFO, I²C, MFI, MMC, SCI, Serial Sound, SIM, SPI, USB
• Peripherals: DMA, LCD, POR, WDT
• Number Of I /o: 69
• Program Memory Type: ROMless
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 1.4 V ~ 1.6 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 256-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

Section 10 Bus State Controller (BSC)
The setup time of the address and CS signal with respect to the read/write strobe can be specified
by bit A1S0 in WCR3 within a range of 0 to 1 cycle. The data-hold time of the address and CS
signal with respect to the read/write strobe can be specified by bits A1H1 and A1H0 within a
range of 0 to 3 cycles.
(3) Area 2
For area 2, off-chip address bits A28 to A26 are 010.
The interfaces that can be set for this area are SRAM, MPX, and synchronous DRAM.
When the SRAM interface is in use, a bus width of 8, 16, or 32 bits is selectable with bits A2SZ1
and A2SZ0 in BCR2. When the MPX interface is in use, a bus width of 32 bits should be selected
by bits A2SZ1 and A2SZ0 in BCR2. When the synchronous DRAM interface is in use, select 32
bits by the SZ bits in MCR.
When area 2 is accessed, the CS2 signal is asserted. When the SRAM interface is in use, the RD
signal, which can be used as OE, and write control signals WE0 to WE3 are asserted.
As regards the number of bus cycles, 0 to 15 wait cycles is selectable with bits A2W2 to A2W0 in
WCR2. In addition, any number of wait cycles can be inserted in each bus cycle by the external
wait pin (RDY).
The setup time of the address and CS signal with respect to the read/write strobe can be specified
by bit A2S0 in WCR3 within a range of 0 to 1 cycle. The data-hold time of the address and CS
signal with respect to the read/write strobe can be specified by bits A2H1 and A2H0 within a
range of 0 to 3 cycles.
When the synchronous DRAM interface is in use, the RAS, CAS, and RD/WR signals and byte
control signals DQM0 to DQM3 are asserted, and address multiplexing is performed. Timing
control for signals RAS, CAS, and data, and address multiplexing control, can be specified by
MCR.
(4) Area 3
For area 3, off-chip address bits A28 to A26 are 011.
The interfaces that can be set for this area are SRAM, MPX, and synchronous DRAM.
When the SRAM interface is in use, a bus width of 8, 16, or 32 bits is selectable with bits A3SZ1
and A3SZ0 in BCR2. When the MPX interface is in use, a bus width of 32 bits should be selected
by bits A3SZ1 and A3SZ0 in BCR2. When the synchronous DRAM interface is in use, select 32
bits by the SZ bits in MCR.
Rev. 2.00 Feb. 12, 2010 Page 306 of 1330
REJ09B0554-0200